for convenient operation of x/y-deflector
Specifications
The IBA Cyclone 30 cyclotron is used for the production of radionuclides applying 16-30 MeV proton beams with currents up to 300 uA. An upgrade for a 2 x 300 uA dualbeam is operational since 2012. Of the four radiation bunkers, one is regularly available for the installation of special targets. A B-laboratory is avaliable for the processing of light-radioactive substances.
The radio-isotopes, 123I, 81Kr and 18F are being produced commercially for the company GE-Healthcare, to serve European hospitals for radiodiagnostics.
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Single gold layer on c-SiRBS spectrum of a single Au layer on c-Si. The surface energies of Au and Si are indicated. The Au layer contains 289x1015 atoms per cm2, about 49 nm. |
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Silicon nitride layer with hydrogenRBS spectrum of 156 nm Si3N4 measured under channeling conditions. The results of this measurement: N=812x1015 at/cm2 and Si = 594x1015 at/cm2 , N/Si=1.37. Since the thickness has been measured by other means, the density can now be calculated: 2.98 g/cm3. |
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ERD spectrum of the 156 nm SiNx sample described above. From this spectrum the hydrogen content of the film is determined: 48x1015 at/cm2, which is 3.3 at%. The overall composition of the film is: Si3N4.1H0.24. |
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Crystal damage and implantation profileRBS measurement of a crystalline Si wafer in which 12.6x1015 H2 per cm2 is implanted with an energy of 40 keV. The random (i.e. not channeled) spectrum shows a normal spectrum for bulk silicon. The spectrum measured under channeling geometry reveals the crystal damage due to the implantation. |
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ERD spectrum of the same sample showing the hydrogen concentration profile. The implantation profile peaks at 220 nm depth. |
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Deuterium profileDeuterium can also be profiled with He-ERD. This figure shows the spectrum and simulation of a double layer structure of 110 nm Si3N4H0.03D0.22 on 70 nm Si3N4H0.26. The peak near channel 370 points to the presence 3 x 1015 at/cm2 in the surface region of the sample. |
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